DD1000S33HE3B60BOSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-IHVB13
$1,906.32
Available to order
Reference Price (USD)
1+
$1906.32000
500+
$1887.2568
1000+
$1868.1936
1500+
$1849.1304
2000+
$1830.0672
2500+
$1811.004
Exquisite packaging
Discount
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Introducing Infineon Technologies's DD1000S33HE3B60BOSA1, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust Infineon Technologies's decades of semiconductor expertise embedded in every DD1000S33HE3B60BOSA1 for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3300 V
- Current - Average Rectified (Io) (per Diode): 1000A (DC)
- Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
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