DD1200S45KL3B5NOSA1
Infineon Technologies
Infineon Technologies
DIODE MODULE 1200V 1200A
$2,511.60
Available to order
Reference Price (USD)
2+
$1,823.96500
Exquisite packaging
Discount
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Engineered for excellence, Infineon Technologies's DD1200S45KL3B5NOSA1 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Infineon Technologies's proprietary screening processes, the DD1200S45KL3B5NOSA1 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 1200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1500 A @ 2800 V
- Operating Temperature - Junction: -50°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV130-4
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