DD800S17H4B2BOSA2
Infineon Technologies
Infineon Technologies
DIODE MODUL GP 1700V AGIHMB130-1
$1,275.58
Available to order
Reference Price (USD)
2+
$839.20000
Exquisite packaging
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Meet the DD800S17H4B2BOSA2 - Infineon Technologies's advanced solution in the Diodes - Rectifiers - Arrays segment. This high-speed rectifier array boasts ultra-low recovery time, significantly reducing power loss in switching applications. From server power supplies to LED lighting drivers and electric vehicle charging stations, this component ensures energy-efficient operation. Infineon Technologies combines innovative silicon technology with rigorous testing to deliver diode arrays that outperform in reliability and thermal management.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 900 A @ 900 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHMB130-1
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