DD800S33K2CNOSA1
Infineon Technologies
Infineon Technologies
DIODE MODULE GP 3300V AIHV130-3
$2,235.72
Available to order
Reference Price (USD)
2+
$1,355.54000
Exquisite packaging
Discount
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The DD800S33K2CNOSA1 from Infineon Technologies sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Infineon Technologies's rigorous quality control ensures the DD800S33K2CNOSA1 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Last Time Buy
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3300 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
- Operating Temperature - Junction: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV130-3
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