DDA114TUQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.07
Available to order
Reference Price (USD)
1+
$0.06826
500+
$0.0675774
1000+
$0.0668948
1500+
$0.0662122
2000+
$0.0655296
2500+
$0.064847
Exquisite packaging
Discount
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Upgrade your electronic designs with the DDA114TUQ-7-F by Diodes Incorporated, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the DDA114TUQ-7-F excels in automotive systems, power management modules, and communication devices. Diodes Incorporated's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose DDA114TUQ-7-F for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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