DDTB113EC-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT23-3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.04707
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DDTB113EC-7-F Diodes Incorporated's answer to modern circuit design challenges. This pre-biased bipolar transistor combines 2N3904 compatibility with enhanced thermal characteristics. Key applications include: Electric vehicle charging stations Industrial IoT gateways Smart meter modules With 100% automated production testing, each unit delivers military-grade reliability for critical infrastructure projects.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Panasonic Electronic Components
UNR521800L
Panasonic Electronic Components
DRC3115T0L
Rohm Semiconductor
DTA114TEBTL
onsemi
FJN3306RBU
onsemi
FJX4011RTF
Infineon Technologies
BCR 108T E6327
NXP USA Inc.
PDTA113ZS,126
Panasonic Electronic Components
DRA3124E0L
Panasonic Electronic Components
UNR92A0G0L
Panasonic Electronic Components