DDTB114TU-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
$0.00
Available to order
Reference Price (USD)
3,000+
$0.06276
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDTB114TU-7-F from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Diodes Incorporated's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
NXP USA Inc.
PDTC123YS,126
Panasonic Electronic Components
DRC3144V0L
Panasonic Electronic Components
UNR9217G0L
Infineon Technologies
BCR 112L3 E6327
onsemi
FJX4005RTF
onsemi
MMUN2212LT1
Infineon Technologies
BCR 146L3 E6327
Rohm Semiconductor
DTA143XEBTL
Micro Commercial Co
DTC144EKA-TP
Toshiba Semiconductor and Storage