DDTC113TE-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
$0.29
Available to order
Reference Price (USD)
3,000+
$0.05230
6,000+
$0.04600
15,000+
$0.03970
30,000+
$0.03760
75,000+
$0.03550
150,000+
$0.03200
Exquisite packaging
Discount
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Engineers choose DDTC113TE-7-F for its exceptional linearity in amplification circuits. Diodes Incorporated's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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