DDTC115TKA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SC59
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, DDTC115TKA-7-F offers unmatched convenience. Diodes Incorporated's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
Related Products
NXP USA Inc.
PDTD123TS,126
Diodes Incorporated
DDTA123YKA-7-F
Panasonic Electronic Components
UNRL21300A
Panasonic Electronic Components
DRA5152Z0L
Rohm Semiconductor
DTD723YETL
Panasonic Electronic Components
DRC3144W0L
Diodes Incorporated
DDTC142TU-7-F
Rohm Semiconductor
DTB743ZMT2L
Toshiba Semiconductor and Storage
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage