DDTD123TC-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
$0.32
Available to order
Reference Price (USD)
3,000+
$0.05753
6,000+
$0.05060
15,000+
$0.04367
30,000+
$0.04136
75,000+
$0.03905
150,000+
$0.03520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents the DDTD123TC-7-F a game-changer in pre-biased transistor technology. The device's thermal shutdown protection and 5kV ESD rating make it perfect for harsh environments like oil/gas monitoring and agricultural machinery. Its 1.5V low saturation voltage enhances energy efficiency in portable electronics and wearables.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Nexperia USA Inc.
PDTA144EQBZ
Toshiba Semiconductor and Storage
RN1101MFV,L3XHF(CT
Nexperia USA Inc.
PDTC143XUF
Rohm Semiconductor
DTA143ZUBHZGTL
Nexperia USA Inc.
NHDTA124ETVL
onsemi
DTC114EET1G
onsemi
SMUN5115T1G
NXP USA Inc.
PDTA143ZE,115
Nexperia USA Inc.
PDTA114TM,315
Nexperia USA Inc.