DF150R12W1H3FB11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$55.19
Available to order
Reference Price (USD)
1+
$55.19000
500+
$54.6381
1000+
$54.0862
1500+
$53.5343
2000+
$52.9824
2500+
$52.4305
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's DF150R12W1H3FB11BOMA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The DF150R12W1H3FB11BOMA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's DF150R12W1H3FB11BOMA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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