DGD1003FTA-13
Diodes Incorporated
Diodes Incorporated
HV GATE DRIVER V-DFN3035-8(TYPE
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Diodes Incorporated's DGD1003FTA-13, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The DGD1003FTA-13 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 150 V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN
- Supplier Device Package: V-DFN3035-8
Related Products
onsemi
NCP81075MTTXG
Infineon Technologies
2EDN8533RXTMA1
onsemi
NCP81085MTTXG
Texas Instruments
UCD7100APWP
onsemi
NCP51513ABMNTWG
Renesas Electronics America Inc
HIP2210FRTZ-T7A
Power Integrations
1SP0335V2M1-FZ250R65KE3
Analog Devices Inc.
LTC7000ARMSE-1#TRPBF
Harris Corporation
ICL7667R4616
Power Integrations