DMC2710UVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V-24V TSOT26
$0.10
Available to order
Reference Price (USD)
1+
$0.09753
500+
$0.0965547
1000+
$0.0955794
1500+
$0.0946041
2000+
$0.0936288
2500+
$0.0926535
Exquisite packaging
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Discover the high-performance DMC2710UVT-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMC2710UVT-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 600pC @ 4.5V, 700pC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-23-6
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