DME500
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 1.15GHZ 55KT
$0.00
Available to order
Reference Price (USD)
25+
$308.24680
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DME500 RF Bipolar Junction Transistor (BJT) by Microsemi Corporation is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the DME500 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Microsemi Corporation for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB ~ 6.5dB
- Power - Max: 1700W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55KT
- Supplier Device Package: 55KT
Related Products
Microsemi Corporation
23A017
Microsemi Corporation
MRF5812MR2
Central Semiconductor Corp
CMPTH10 TR
Microsemi Corporation
MS1076C
Microsemi Corporation
MRF5812M
Microsemi Corporation
42106HS
Microsemi Corporation
TAN500
Microsemi Corporation
MS2348
Central Semiconductor Corp
CP616-CM5160-WN
Microsemi Corporation