DMG2301L-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 3A SOT23
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG2301L-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRFH7914TRPBF
Panjit International Inc.
PJL9409_R2_00001
Toshiba Semiconductor and Storage
TPH1110FNH,L1Q
IXYS
IXFA80N25X3
IXYS
IXFQ34N50P3
Microchip Technology
DN2530N3-G
STMicroelectronics
STD15N60M2-EP
Vishay Siliconix
SIHP4N80E-GE3
Texas Instruments
CSD18510Q5B
Infineon Technologies