DMG3414U-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 4.2A SOT23-3
$0.51
Available to order
Reference Price (USD)
3,000+
$0.19050
6,000+
$0.17950
15,000+
$0.16850
30,000+
$0.16080
Exquisite packaging
Discount
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Enhance your electronic projects with the DMG3414U-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMG3414U-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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