DMN1008UFDFQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.13
Available to order
Reference Price (USD)
1+
$0.13449
500+
$0.1331451
1000+
$0.1318002
1500+
$0.1304553
2000+
$0.1291104
2500+
$0.1277655
Exquisite packaging
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The DMN1008UFDFQ-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Diodes Incorporated