DMN1023UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N CH 5.1A U-WLB1010-4
$0.00
Available to order
Reference Price (USD)
3,000+
$0.17329
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the DMN1023UCB4-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMN1023UCB4-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 23mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1010-4 (Type C)
- Package / Case: 4-UFBGA, WLBGA
Related Products
Nexperia USA Inc.
PH2230DLS/1X
Panjit International Inc.
PJF4NA65_T0_00001
Comchip Technology
CMS3401-HF
IXYS
IXFD80N10Q-8XQ
Renesas Electronics America Inc
2SJ208-T1-AZ
IXYS
IXFJ52N30Q
IXYS
IXFV110N10PS
IXYS
IXRB5-506MINIPACK2
Infineon Technologies
SPB80N06SL-07
Wolfspeed, Inc.