DMN1032UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 12V 4.8A U-WLB1010-4
$0.61
Available to order
Reference Price (USD)
3,000+
$0.25146
6,000+
$0.23694
15,000+
$0.22242
30,000+
$0.21226
Exquisite packaging
Discount
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The DMN1032UCB4-7 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMN1032UCB4-7 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1010-4
- Package / Case: 4-UFBGA, WLBGA
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