DMN1053UCP4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 12V 2.7A X3DSN0808-4
$0.16
Available to order
Reference Price (USD)
3,000+
$0.17994
Exquisite packaging
Discount
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The DMN1053UCP4-7 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMN1053UCP4-7 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.34W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X3-DSN0808-4
- Package / Case: 4-XFBGA, CSPBGA
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