DMN1054UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 8V 2.7A X1-WLB0808-4
$0.69
Available to order
Reference Price (USD)
3,000+
$0.28720
6,000+
$0.26960
15,000+
$0.26080
30,000+
$0.25600
Exquisite packaging
Discount
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Upgrade your designs with the DMN1054UCB4-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMN1054UCB4-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-WLB0808-4
- Package / Case: 4-XFBGA, WLBGA
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