DMN10H220LVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1.87A TSOT26
$0.21
Available to order
Reference Price (USD)
3,000+
$0.18600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMN10H220LVT-7 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMN10H220LVT-7 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.67W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Nexperia USA Inc.
PSMN6R5-25YLC,115
Sanyo
ATP203-TL-H
Diodes Incorporated
DMJ70H1D3SJ3
onsemi
MCH6351-TL-W
IXYS
IXTA05N100
STMicroelectronics
STH145N8F7-2AG
Infineon Technologies
IPD60R180C7ATMA1
Infineon Technologies
BSC0901NSATMA1
Rohm Semiconductor
RSR020N06HZGTL
Diodes Incorporated