DMN14M8UFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.18
Available to order
Reference Price (USD)
1+
$0.17910
500+
$0.177309
1000+
$0.175518
1500+
$0.173727
2000+
$0.171936
2500+
$0.170145
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN14M8UFDF-13 single MOSFET from Diodes Incorporated is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the DMN14M8UFDF-13 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1246 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Toshiba Semiconductor and Storage
SSM6K208FE,LF
Renesas
RJK5030DPD-03#J2
Diodes Incorporated
DMP3021SFVW-13
Infineon Technologies
IPN50R3K0CEATMA1
onsemi
FDS6612A-NB5E029A
onsemi
NTMYS4D5N04CTWG
Diodes Incorporated
DMT10H9M9LK3-13
Renesas Electronics America Inc
RJK0358DPA-WS#J0
Renesas Electronics America Inc
2SJ211(0)-T1B-A
onsemi