DMN2005UFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 18A PWRDI3333
$0.44
Available to order
Reference Price (USD)
1+
$0.43582
500+
$0.4314618
1000+
$0.4271036
1500+
$0.4227454
2000+
$0.4183872
2500+
$0.414029
Exquisite packaging
Discount
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The DMN2005UFGQ-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN2005UFGQ-7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.05W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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