DMN2016UFX-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V-24V V-DFN2050-4
$0.28
Available to order
Reference Price (USD)
3,000+
$0.30389
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2016UFX-7 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMN2016UFX-7 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Power - Max: 1.07W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-VFDFN Exposed Pad
- Supplier Device Package: V-DFN2050-4
Related Products
Texas Instruments
CSD87501LT
Rohm Semiconductor
EM6K1T2R
Panjit International Inc.
PJX138K_R1_00001
Fairchild Semiconductor
FDW2516NZ
onsemi
NTMFD5C446NLT1G
Nexperia USA Inc.
NX6020CAKSX
onsemi
FDG8850NZ
Taiwan Semiconductor Corporation
TSM3911DCX6 RFG
Infineon Technologies
IPG16N10S4L61AATMA1
Fairchild Semiconductor