DMN2024UFU-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2030-6
$0.18
Available to order
Reference Price (USD)
1+
$0.17730
500+
$0.175527
1000+
$0.173754
1500+
$0.171981
2000+
$0.170208
2500+
$0.168435
Exquisite packaging
Discount
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Discover the high-performance DMN2024UFU-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMN2024UFU-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc)
- Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
- Power - Max: 810mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)