DMN2028UFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 7.9A 6UDFN
$0.54
Available to order
Reference Price (USD)
3,000+
$0.14520
6,000+
$0.13640
15,000+
$0.12760
30,000+
$0.11704
75,000+
$0.11264
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMN2028UFDF-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMN2028UFDF-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
onsemi
CPH6603-TL-E
Panjit International Inc.
PJP35N06A_T0_00001
Infineon Technologies
IPI100N06S3L-03
NXP USA Inc.
BUK7631-100E,118
Toshiba Semiconductor and Storage
TK58E06N1,S1X
Microchip Technology
APT1201R4BFLLG
Fairchild Semiconductor
HUF76437P3
Renesas Electronics America Inc
UPA1872GR-9JG-E1-A
Panjit International Inc.
PJA3433_R1_00001
Diodes Incorporated