DMN2029USD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 5.8A 8SO
$0.44
Available to order
Reference Price (USD)
2,500+
$0.17631
5,000+
$0.16669
12,500+
$0.15706
25,000+
$0.14551
62,500+
$0.14070
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the DMN2029USD-13 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMN2029USD-13 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.8A
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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