DMN2053UVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V-24V TSOT26 T&R
$0.10
Available to order
Reference Price (USD)
10,000+
$0.11106
Exquisite packaging
Discount
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The DMN2053UVT-13 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMN2053UVT-13 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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