DMN3013LDG-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V-30V POWERDI333
$0.37
Available to order
Reference Price (USD)
1,000+
$0.39631
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3013LDG-7 by Diodes Incorporated is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DMN3013LDG-7 ensures consistent and dependable performance. Diodes Incorporated's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 2.16W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
Related Products
Renesas Electronics America Inc
2SK1626-E
Micro Commercial Co
MCQ4503B-TP
Alpha & Omega Semiconductor Inc.
AON3820
Toshiba Semiconductor and Storage
SSM6N58NU,LF
Rectron USA
RM8810
Vishay Siliconix
SQJQ906EL-T1_GE3
Diodes Incorporated
DMN2013UFX-7
Infineon Technologies
DF11MR12W1M1PB11BPSA1
onsemi
NTGD3133PT1G
Alpha & Omega Semiconductor Inc.