DMN3020LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 11.3A TO252-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3020LK3-13 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN3020LK3-13 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.17W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSS223PW L6327
Sanyo
2SJ657
Diodes Incorporated
DMG3N60SJ3
onsemi
SFT1341-E
Infineon Technologies
IRF2807ZSPBF
STMicroelectronics
STP16NS25
Fairchild Semiconductor
FQP9N25C
Infineon Technologies
IPD13N03LA G
IXYS
IXFE34N100
onsemi