DMN3027LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 5.3A PWRDI3333-8
$0.28
Available to order
Reference Price (USD)
3,000+
$0.30515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMN3027LFG-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMN3027LFG-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Fairchild Semiconductor
FDMC0202S
onsemi
NVMFS5C426NWFET1G
Diodes Incorporated
DMTH84M1SPS-13
Infineon Technologies
IPW65R110CFD7XKSA1
STMicroelectronics
STO65N60DM6
Vishay Siliconix
SQJ138EP-T1_GE3
Diodes Incorporated
DMT3006LFG-7
Diodes Incorporated
DMP2079LCA3-7
Diodes Incorporated
DMNH6042SPDQ-13
Infineon Technologies