DMN3110LCP3-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 3.2A 3DFN
$0.00
Available to order
Reference Price (USD)
3,000+
$0.17869
Exquisite packaging
Discount
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The DMN3110LCP3-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN3110LCP3-7 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 69mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 4.5 V
- Vgs (Max): 12V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.38W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
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