DMN4035L-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 4.6A SOT23
$0.11
Available to order
Reference Price (USD)
1+
$0.10926
500+
$0.1081674
1000+
$0.1070748
1500+
$0.1059822
2000+
$0.1048896
2500+
$0.103797
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMN4035L-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMN4035L-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 720mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXTP08N120P
Vishay Siliconix
SISA72DN-T1-GE3
Infineon Technologies
IPW65R190CFDFKSA1
STMicroelectronics
STB40NF10LT4
Diodes Incorporated
DMT6030LFDF-7
Infineon Technologies
IPB80P03P4L04ATMA2
Toshiba Semiconductor and Storage
TPH1R104PB,L1XHQ
Diodes Incorporated
DMT3009LFVWQ-13
Diodes Incorporated
DMN21D2UFB-7
IXYS