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DMN62D1LFDQ-13

Diodes Incorporated
DMN62D1LFDQ-13 Preview
Diodes Incorporated
MOSFET N-CH 60V 400MA 3DFN T&R 1
$0.09
Available to order
Reference Price (USD)
10,000+
$0.10097
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN1212-3
  • Package / Case: 3-XDFN

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