DMN62D4LFB-7B
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V X2-DFN1006
$0.05
Available to order
Reference Price (USD)
1+
$0.04825
500+
$0.0477675
1000+
$0.047285
1500+
$0.0468025
2000+
$0.04632
2500+
$0.0458375
Exquisite packaging
Discount
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Meet the DMN62D4LFB-7B by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMN62D4LFB-7B stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 407mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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