DMN63D8L-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 350MA SOT23
$0.26
Available to order
Reference Price (USD)
3,000+
$0.04641
6,000+
$0.04080
15,000+
$0.03519
30,000+
$0.03332
75,000+
$0.03145
150,000+
$0.02771
Exquisite packaging
Discount
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Discover the DMN63D8L-7 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMN63D8L-7 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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