DMP1007UCB9-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 8V 13.2A U-WLB1515-9
$0.86
Available to order
Reference Price (USD)
1+
$0.86000
500+
$0.8514
1000+
$0.8428
1500+
$0.8342
2000+
$0.8256
2500+
$0.817
Exquisite packaging
Discount
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Optimize your power electronics with the DMP1007UCB9-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMP1007UCB9-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1515-9 (Type C)
- Package / Case: 9-UFBGA, WLBGA
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