DMP21D0UFB4-7R
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN1006-
$0.09
Available to order
Reference Price (USD)
1+
$0.09108
500+
$0.0901692
1000+
$0.0892584
1500+
$0.0883476
2000+
$0.0874368
2500+
$0.086526
Exquisite packaging
Discount
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Optimize your power electronics with the DMP21D0UFB4-7R single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMP21D0UFB4-7R combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 430mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
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