DMS3014SFGQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 9.5A PWRDI3333-8
$0.28
Available to order
Reference Price (USD)
1+
$0.28279
500+
$0.2799621
1000+
$0.2771342
1500+
$0.2743063
2000+
$0.2714784
2500+
$0.2686505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMS3014SFGQ-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMS3014SFGQ-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
NXP Semiconductors
BUK7225-55A,118
onsemi
NVTP2955G
Diodes Incorporated
DMT8012LFG-7
Diodes Incorporated
DMP26M1UPS-13
Renesas Electronics America Inc
2SJ181-90STL
onsemi
NTMTSC4D3N15MC
Diodes Incorporated
DMTH8028LFVWQ-13
Goford Semiconductor
G50N03D5
Vishay Siliconix
SIDR104ADP-T1-RE3
onsemi