DMT10H015LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V PWRDI3333
$0.49
Available to order
Reference Price (USD)
1+
$0.48510
500+
$0.480249
1000+
$0.475398
1500+
$0.470547
2000+
$0.465696
2500+
$0.460845
Exquisite packaging
Discount
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Meet the DMT10H015LFG-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMT10H015LFG-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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