DMT10H9M9SSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V SO-8 T&R
$0.51
Available to order
Reference Price (USD)
1+
$0.50666
500+
$0.5015934
1000+
$0.4965268
1500+
$0.4914602
2000+
$0.4863936
2500+
$0.481327
Exquisite packaging
Discount
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Enhance your electronic projects with the DMT10H9M9SSS-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMT10H9M9SSS-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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