DMT3006LFVQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 60A POWERDI3333
$0.32
Available to order
Reference Price (USD)
3,000+
$0.34105
Exquisite packaging
Discount
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Discover the DMT3006LFVQ-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMT3006LFVQ-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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