DMT4008LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 12.8A 8SO
$0.18
Available to order
Reference Price (USD)
1+
$0.18175
500+
$0.1799325
1000+
$0.178115
1500+
$0.1762975
2000+
$0.17448
2500+
$0.1726625
Exquisite packaging
Discount
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The DMT4008LSS-13 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMT4008LSS-13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.32W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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