DMT47M2LDVQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V-40V POWERDI333
$0.51
Available to order
Reference Price (USD)
1+
$0.50943
500+
$0.5043357
1000+
$0.4992414
1500+
$0.4941471
2000+
$0.4890528
2500+
$0.4839585
Exquisite packaging
Discount
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Discover the high-performance DMT47M2LDVQ-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMT47M2LDVQ-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
- Power - Max: 2.34W (Ta), 14.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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