DMT6006SPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V PWRDI5060
$0.40
Available to order
Reference Price (USD)
1+
$0.40210
500+
$0.398079
1000+
$0.394058
1500+
$0.390037
2000+
$0.386016
2500+
$0.381995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT6006SPS-13 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMT6006SPS-13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.45W (Ta), 89.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMTH8008SFGQ-7
Harris Corporation
RFP42N03L
Fairchild Semiconductor
FCPF165N65S3R0L
Vishay Siliconix
SIHD14N60ET4-GE3
Diodes Incorporated
DMN2451UFB4Q-7B
Harris Corporation
IRFD322
Vishay Siliconix
SQ3410EV-T1_BE3
onsemi
NTMTS002N08MC
Goford Semiconductor
G50N03J
IXYS