DMT6007LFGQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 15A PWRDI3333
$0.52
Available to order
Reference Price (USD)
3,000+
$0.51034
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT6007LFGQ-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMN67D8LV-13
Vishay Siliconix
SI6410DQ-T1-E3
Vishay Siliconix
SIS612EDNT-T1-GE3
Infineon Technologies
IRF7321D2TR
Infineon Technologies
IPB80R290C3A
Vishay Siliconix
IRF9540STRR
Diodes Incorporated
ZVN2110GTC
Nexperia USA Inc.
BUK9507-30B,127
Toshiba Semiconductor and Storage
TPC6012(TE85L,F,M)
Infineon Technologies