DMT6008LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 13A PWRDI3333
$0.99
Available to order
Reference Price (USD)
3,000+
$0.42524
6,000+
$0.39918
15,000+
$0.38615
30,000+
$0.37904
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT6008LFG-13 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMT6008LFG-13 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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