DMT6009LJ3
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 74.5A TO251
$0.61
Available to order
Reference Price (USD)
1+
$0.61040
500+
$0.604296
1000+
$0.598192
1500+
$0.592088
2000+
$0.585984
2500+
$0.57988
Exquisite packaging
Discount
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The DMT6009LJ3 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMT6009LJ3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 74.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (Type TH)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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