DMT6012LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
$0.24
Available to order
Reference Price (USD)
1+
$0.23955
500+
$0.2371545
1000+
$0.234759
1500+
$0.2323635
2000+
$0.229968
2500+
$0.2275725
Exquisite packaging
Discount
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Upgrade your designs with the DMT6012LPSW-13 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMT6012LPSW-13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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